Vishay N-Channel MOSFET, 1.8 A, 800 V, 3-Pin TO-220AB IRFBE20PBF

Κωδικός Προϊόντος της RS: 542-9535Κατασκευαστής: VishayΚωδικός Κατασκευαστή: IRFBE20PBF
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.8 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

6.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

38 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Height

9.01mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-channel MOSFET,IRFBE20 1.8A 800V
N-channel MOSFET,IRFBE20 1.8A 800VΚατασκευαστής: Vishay
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,15

€ 1,15 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,43

€ 1,43 Μονάδας Με Φ.Π.Α

Vishay N-Channel MOSFET, 1.8 A, 800 V, 3-Pin TO-220AB IRFBE20PBF
Επιλέγξτε συσκευασία

€ 1,15

€ 1,15 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,43

€ 1,43 Μονάδας Με Φ.Π.Α

Vishay N-Channel MOSFET, 1.8 A, 800 V, 3-Pin TO-220AB IRFBE20PBF

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
N-channel MOSFET,IRFBE20 1.8A 800V
N-channel MOSFET,IRFBE20 1.8A 800VΚατασκευαστής: Vishay
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.8 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

6.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

38 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Height

9.01mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
N-channel MOSFET,IRFBE20 1.8A 800V
N-channel MOSFET,IRFBE20 1.8A 800VΚατασκευαστής: Vishay
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α