Vishay Single 1 Type N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin

Κωδικός Προϊόντος της RS: 180-8316Κατασκευαστής: VishayΚωδικός Κατασκευαστή: IRFBE30LPBF
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.1A

Maximum Drain Source Voltage Vds

800V

Pin Count

3

Maximum Drain Source Resistance Rds

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.8V

Typical Gate Charge Qg @ Vgs

78nC

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Number of Elements per Chip

1

Automotive Standard

No

Χώρα Προέλευσης

China

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 112,00

€ 2,24 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 138,88

€ 2,778 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α

Vishay Single 1 Type N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin

€ 112,00

€ 2,24 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 138,88

€ 2,778 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α

Vishay Single 1 Type N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Ράγα
50 - 50€ 2,24€ 112,00
100 - 200€ 2,14€ 107,00
250 - 450€ 1,98€ 99,00
500 - 1200€ 1,88€ 94,00
1250+€ 1,80€ 90,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.1A

Maximum Drain Source Voltage Vds

800V

Pin Count

3

Maximum Drain Source Resistance Rds

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.8V

Typical Gate Charge Qg @ Vgs

78nC

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Number of Elements per Chip

1

Automotive Standard

No

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more