Vishay N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB IRFBE30PBF

Κωδικός Προϊόντος της RS: 178-0818Κατασκευαστής: VishayΚωδικός Κατασκευαστή: IRFBE30PBF
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.7mm

Length

10.41mm

Typical Gate Charge @ Vgs

78 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.01mm

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 104,50

€ 2,09 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 129,58

€ 2,592 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α

Vishay N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB IRFBE30PBF

€ 104,50

€ 2,09 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 129,58

€ 2,592 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α

Vishay N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB IRFBE30PBF
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Quantity ΠοσότηταΤιμή μονάδαςPer Ράγα
50 - 50€ 2,09€ 104,50
100 - 200€ 1,85€ 92,50
250+€ 1,59€ 79,50

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.7mm

Length

10.41mm

Typical Gate Charge @ Vgs

78 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.01mm

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more