Vishay N-Channel MOSFET, 1.7 A, 60 V, 4-Pin HVMDIP IRFD014PBF

Κωδικός Προϊόντος της RS: 541-0581PΚατασκευαστής: VishayΚωδικός Κατασκευαστή: IRFD014PBF
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.7 A

Maximum Drain Source Voltage

60 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11 nC @ 10 V

Width

6.29mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+175 °C

Height

3.37mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 20,90

€ 2,09 Μονάδας (διαθέσιμο σε μία ταινία) (Exc. Vat)Χωρίς Φ.Π.Α

€ 25,92

€ 2,59 Μονάδας (διαθέσιμο σε μία ταινία) Με Φ.Π.Α

Vishay N-Channel MOSFET, 1.7 A, 60 V, 4-Pin HVMDIP IRFD014PBF

€ 20,90

€ 2,09 Μονάδας (διαθέσιμο σε μία ταινία) (Exc. Vat)Χωρίς Φ.Π.Α

€ 25,92

€ 2,59 Μονάδας (διαθέσιμο σε μία ταινία) Με Φ.Π.Α

Vishay N-Channel MOSFET, 1.7 A, 60 V, 4-Pin HVMDIP IRFD014PBF

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδας
10 - 49€ 2,09
50 - 99€ 1,91
100 - 249€ 1,80
250+€ 1,72

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.7 A

Maximum Drain Source Voltage

60 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11 nC @ 10 V

Width

6.29mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+175 °C

Height

3.37mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more