N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP Vishay IRFD120PBF

Κωδικός Προϊόντος της RS: 541-1691Κατασκευαστής: VishayΚωδικός Κατασκευαστή: IRFD120PBF
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

16 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Width

6.29mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

3.37mm

Χώρα Προέλευσης

Philippines

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 1,94

Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 2,41

Μονάδας (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP Vishay IRFD120PBF

€ 1,94

Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 2,41

Μονάδας (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP Vishay IRFD120PBF
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδας
1 - 9€ 1,94
10 - 49€ 1,79
50 - 99€ 1,69
100 - 249€ 1,51
250+€ 1,39

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

16 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Width

6.29mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

3.37mm

Χώρα Προέλευσης

Philippines

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more