Vishay N-Channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP IRFD210PBF
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
200 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
6.29mm
Length
5mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
3.37mm
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 44,00
€ 0,44 Μονάδας (Σε μία ράγα των 100) (Exc. Vat)Χωρίς Φ.Π.Α
€ 54,56
€ 0,546 Μονάδας (Σε μία ράγα των 100) Με Φ.Π.Α
100
€ 44,00
€ 0,44 Μονάδας (Σε μία ράγα των 100) (Exc. Vat)Χωρίς Φ.Π.Α
€ 54,56
€ 0,546 Μονάδας (Σε μία ράγα των 100) Με Φ.Π.Α
100
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Ideate. Create. Collaborate
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
200 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
6.29mm
Length
5mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
3.37mm
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products