Vishay P-Channel MOSFET, 1.1 A, 60 V, 4-Pin HVMDIP IRFD9014PBF
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
6.29mm
Length
5mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
3.37mm
Λεπτομέρειες Προϊόντος
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 57,00
€ 0,57 Μονάδας (Σε μία ράγα των 100) (Exc. Vat)Χωρίς Φ.Π.Α
€ 70,68
€ 0,707 Μονάδας (Σε μία ράγα των 100) Με Φ.Π.Α
100
€ 57,00
€ 0,57 Μονάδας (Σε μία ράγα των 100) (Exc. Vat)Χωρίς Φ.Π.Α
€ 70,68
€ 0,707 Μονάδας (Σε μία ράγα των 100) Με Φ.Π.Α
100
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
| Quantity Ποσότητα | Τιμή μονάδας | Per Ράγα |
|---|---|---|
| 100 - 100 | € 0,57 | € 57,00 |
| 200 - 400 | € 0,52 | € 52,00 |
| 500+ | € 0,50 | € 50,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
6.29mm
Length
5mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
3.37mm
Λεπτομέρειες Προϊόντος
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products