Vishay P-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRFD9120PBF

Κωδικός Προϊόντος της RS: 541-0553Κατασκευαστής: VishayΚωδικός Κατασκευαστή: IRFD9120PBF
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.29mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

18 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

3.37mm

Χώρα Προέλευσης

Philippines

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P-channel MOSFET,IRFD9120 1A 100V
P-channel MOSFET,IRFD9120 1A 100VΚατασκευαστής: Vishay
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

P.O.A.

Vishay P-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRFD9120PBF

P.O.A.

Vishay P-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRFD9120PBF

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
P-channel MOSFET,IRFD9120 1A 100V
P-channel MOSFET,IRFD9120 1A 100VΚατασκευαστής: Vishay
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.29mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

18 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

3.37mm

Χώρα Προέλευσης

Philippines

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
P-channel MOSFET,IRFD9120 1A 100V
P-channel MOSFET,IRFD9120 1A 100VΚατασκευαστής: Vishay
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α