Vishay Single 1 Type P-Channel Power MOSFET, -0.4 A, 200 V, 4-Pin HVMDIP IRFD9210PBF

Κωδικός Προϊόντος της RS: 180-8321Κατασκευαστής: VishayΚωδικός Κατασκευαστή: IRFD9210PBF
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-0.4A

Maximum Drain Source Voltage Vds

200V

Package Type

HVMDIP

Pin Count

4

Maximum Drain Source Resistance Rds

Typical Gate Charge Qg @ Vgs

8.9nC

Maximum Power Dissipation Pd

1W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Width

5 mm

Length

10.79mm

Height

8.38mm

Standards/Approvals

RoHS 2002/95/EC

Number of Elements per Chip

1

Automotive Standard

No

Χώρα Προέλευσης

Philippines

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 55,00

€ 0,55 Μονάδας (Σε μία ράγα των 100) (Exc. Vat)Χωρίς Φ.Π.Α

€ 68,20

€ 0,682 Μονάδας (Σε μία ράγα των 100) Με Φ.Π.Α

Vishay Single 1 Type P-Channel Power MOSFET, -0.4 A, 200 V, 4-Pin HVMDIP IRFD9210PBF

€ 55,00

€ 0,55 Μονάδας (Σε μία ράγα των 100) (Exc. Vat)Χωρίς Φ.Π.Α

€ 68,20

€ 0,682 Μονάδας (Σε μία ράγα των 100) Με Φ.Π.Α

Vishay Single 1 Type P-Channel Power MOSFET, -0.4 A, 200 V, 4-Pin HVMDIP IRFD9210PBF

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Ράγα
100 - 100€ 0,55€ 55,00
200 - 400€ 0,55€ 55,00
500+€ 0,52€ 52,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-0.4A

Maximum Drain Source Voltage Vds

200V

Package Type

HVMDIP

Pin Count

4

Maximum Drain Source Resistance Rds

Typical Gate Charge Qg @ Vgs

8.9nC

Maximum Power Dissipation Pd

1W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Width

5 mm

Length

10.79mm

Height

8.38mm

Standards/Approvals

RoHS 2002/95/EC

Number of Elements per Chip

1

Automotive Standard

No

Χώρα Προέλευσης

Philippines

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more