Vishay N-Channel MOSFET, 2.1 A, 500 V, 3-Pin TO-220FP IRFI820GPBF

Κωδικός Προϊόντος της RS: 708-4771Κατασκευαστής: VishayΚωδικός Κατασκευαστή: IRFI820GPBF
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.1 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

24 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.8mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 10,20

€ 2,04 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 12,65

€ 2,53 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

Vishay N-Channel MOSFET, 2.1 A, 500 V, 3-Pin TO-220FP IRFI820GPBF
Επιλέγξτε συσκευασία

€ 10,20

€ 2,04 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 12,65

€ 2,53 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

Vishay N-Channel MOSFET, 2.1 A, 500 V, 3-Pin TO-220FP IRFI820GPBF

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
5 - 45€ 2,04€ 10,20
50 - 120€ 1,96€ 9,80
125 - 245€ 1,91€ 9,55
250 - 495€ 1,72€ 8,60
500+€ 1,62€ 8,10

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.1 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

24 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.8mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more