Vishay N-Channel MOSFET, 14 A, 500 V, 3-Pin TO-247AC IRFP450APBF

Κωδικός Προϊόντος της RS: 543-0030PΚατασκευαστής: VishayΚωδικός Κατασκευαστή: IRFP450APBF
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

500 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

64 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Height

20.7mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 50,90

€ 5,09 Μονάδας (διαθέσιμο σε μία σακούλα) (Exc. Vat)Χωρίς Φ.Π.Α

€ 63,12

€ 6,31 Μονάδας (διαθέσιμο σε μία σακούλα) Με Φ.Π.Α

Vishay N-Channel MOSFET, 14 A, 500 V, 3-Pin TO-247AC IRFP450APBF
Επιλέγξτε συσκευασία

€ 50,90

€ 5,09 Μονάδας (διαθέσιμο σε μία σακούλα) (Exc. Vat)Χωρίς Φ.Π.Α

€ 63,12

€ 6,31 Μονάδας (διαθέσιμο σε μία σακούλα) Με Φ.Π.Α

Vishay N-Channel MOSFET, 14 A, 500 V, 3-Pin TO-247AC IRFP450APBF

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδας
10 - 49€ 5,09
50 - 99€ 4,59
100 - 249€ 4,36
250+€ 3,76

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

500 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

64 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Height

20.7mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more