Vishay N-Channel MOSFET, 4.3 A, 1000 V, 3-Pin TO-247AC IRFPG40PBF

Κωδικός Προϊόντος της RS: 542-9939PΚατασκευαστής: VishayΚωδικός Κατασκευαστή: IRFPG40PBF
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

120 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Length

15.87mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

20.7mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 67,10

€ 6,71 Μονάδας (διαθέσιμο σε μία σακούλα) (Exc. Vat)Χωρίς Φ.Π.Α

€ 83,20

€ 8,32 Μονάδας (διαθέσιμο σε μία σακούλα) Με Φ.Π.Α

Vishay N-Channel MOSFET, 4.3 A, 1000 V, 3-Pin TO-247AC IRFPG40PBF
Επιλέγξτε συσκευασία

€ 67,10

€ 6,71 Μονάδας (διαθέσιμο σε μία σακούλα) (Exc. Vat)Χωρίς Φ.Π.Α

€ 83,20

€ 8,32 Μονάδας (διαθέσιμο σε μία σακούλα) Με Φ.Π.Α

Vishay N-Channel MOSFET, 4.3 A, 1000 V, 3-Pin TO-247AC IRFPG40PBF

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδας
10 - 49€ 6,71
50 - 99€ 6,16
100 - 249€ 5,87
250+€ 5,61

Ideate. Create. Collaborate

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No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

120 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Length

15.87mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

20.7mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more