Vishay N-Channel MOSFET, 2.4 A, 500 V, 3-Pin DPAK IRFR420TRPBF

Κωδικός Προϊόντος της RS: 710-4657PΚατασκευαστής: VishayΚωδικός Κατασκευαστή: IRFR420TRPBF
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

500 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Width

6.22mm

Height

2.39mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 115,00

€ 1,15 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 142,60

€ 1,426 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

Vishay N-Channel MOSFET, 2.4 A, 500 V, 3-Pin DPAK IRFR420TRPBF
Επιλέγξτε συσκευασία

€ 115,00

€ 1,15 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 142,60

€ 1,426 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

Vishay N-Channel MOSFET, 2.4 A, 500 V, 3-Pin DPAK IRFR420TRPBF

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Καρούλι
100 - 240€ 1,15€ 11,50
250 - 490€ 1,02€ 10,20
500 - 990€ 0,97€ 9,70
1000+€ 0,81€ 8,10

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

500 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Width

6.22mm

Height

2.39mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more