P-Channel MOSFET, 9.9 A, 50 V, 3-Pin DPAK Vishay IRFR9020TRPBF

Κωδικός Προϊόντος της RS: 165-7217Κατασκευαστής: VishayΚωδικός Κατασκευαστή: IRFR9020TRPBF
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

50 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

9.4 nC @ 10 V

Width

6.22mm

Number of Elements per Chip

1

Height

2.38mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 1,11

Μονάδας (Σε ένα καρούλι των 2000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,376

Μονάδας (Σε ένα καρούλι των 2000) (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 9.9 A, 50 V, 3-Pin DPAK Vishay IRFR9020TRPBF

€ 1,11

Μονάδας (Σε ένα καρούλι των 2000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,376

Μονάδας (Σε ένα καρούλι των 2000) (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 9.9 A, 50 V, 3-Pin DPAK Vishay IRFR9020TRPBF
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

50 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

9.4 nC @ 10 V

Width

6.22mm

Number of Elements per Chip

1

Height

2.38mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more