P-Channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK Vishay IRFR9220PBF

Κωδικός Προϊόντος της RS: 540-9698Κατασκευαστής: VishayΚωδικός Κατασκευαστή: IRFR9220PBF
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

200 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Transistor Material

Si

Width

6.22mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

2.39mm

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 3,18

Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 3,94

Μονάδας (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK Vishay IRFR9220PBF

€ 3,18

Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 3,94

Μονάδας (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK Vishay IRFR9220PBF
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδας
1 - 9€ 3,18
10 - 49€ 2,72
50 - 99€ 2,60
100 - 249€ 2,50
250+€ 2,37

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

200 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Transistor Material

Si

Width

6.22mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

2.39mm

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more