P-Channel MOSFET, 1.8 A, 400 V, 3-Pin IPAK Vishay IRFU9310PBF

Κωδικός Προϊόντος της RS: 542-9967Κατασκευαστής: VishayΚωδικός Κατασκευαστή: IRFU9310PBF
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.8 A

Maximum Drain Source Voltage

400 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

13 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Width

2.38mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

6.22mm

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 1,99

Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 2,47

Μονάδας (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 1.8 A, 400 V, 3-Pin IPAK Vishay IRFU9310PBF
Επιλέγξτε συσκευασία

€ 1,99

Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 2,47

Μονάδας (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 1.8 A, 400 V, 3-Pin IPAK Vishay IRFU9310PBF
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.8 A

Maximum Drain Source Voltage

400 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

13 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Width

2.38mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

6.22mm

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more