N-Channel MOSFET, 5.2 A, 200 V, 3-Pin D2PAK Vishay IRL620SPBF
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.2 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
16 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Width
9.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.83mm
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
Standard
5
P.O.A.
Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
5
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.2 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
16 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Width
9.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.83mm
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products