Vishay N-Channel MOSFET, 10 A, 60 V, 3-Pin TO-220AB IRLZ14PBF

Κωδικός Προϊόντος της RS: 541-0604Κατασκευαστής: VishayΚωδικός Κατασκευαστή: IRLZ14PBFDistrelec Article No.: 17118805
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Width

4.7mm

Typical Gate Charge @ Vgs

8.4 nC @ 5 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-channel logicFET,IRLZ14 10A 60V
N-channel logicFET,IRLZ14 10A 60VΚατασκευαστής: Vishay
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,64

€ 1,64 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 2,03

€ 2,03 Μονάδας Με Φ.Π.Α

Vishay N-Channel MOSFET, 10 A, 60 V, 3-Pin TO-220AB IRLZ14PBF
Επιλέγξτε συσκευασία

€ 1,64

€ 1,64 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 2,03

€ 2,03 Μονάδας Με Φ.Π.Α

Vishay N-Channel MOSFET, 10 A, 60 V, 3-Pin TO-220AB IRLZ14PBF

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδας
1 - 9€ 1,64
10 - 49€ 1,59
50 - 99€ 1,20
100 - 249€ 1,10
250+€ 1,02

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Μπορεί να σας ενδιαφέρει
N-channel logicFET,IRLZ14 10A 60V
N-channel logicFET,IRLZ14 10A 60VΚατασκευαστής: Vishay
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Width

4.7mm

Typical Gate Charge @ Vgs

8.4 nC @ 5 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
N-channel logicFET,IRLZ14 10A 60V
N-channel logicFET,IRLZ14 10A 60VΚατασκευαστής: Vishay
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α