Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 Vishay SI1922EDH-T1-GE3
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
263 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
1.6 nC @ 8 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 0,45
Μονάδας (Σε ένα πακέτο των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 0,558
Μονάδας (Σε ένα πακέτο των 50) Με Φ.Π.Α
Standard
50
€ 0,45
Μονάδας (Σε ένα πακέτο των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 0,558
Μονάδας (Σε ένα πακέτο των 50) Με Φ.Π.Α
Standard
50
Αγοράστε μαζικά
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 50 - 450 | € 0,45 | € 22,50 |
| 500 - 1200 | € 0,33 | € 16,50 |
| 1250 - 2450 | € 0,28 | € 14,00 |
| 2500 - 4950 | € 0,25 | € 12,50 |
| 5000+ | € 0,23 | € 11,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
263 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
1.6 nC @ 8 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products