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Vishay N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 SI2302DDS-T1-GE3

RS Stock No.: 152-6358Brand: VishayManufacturers Part No.: SI2302DDS-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.85V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

0.71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Number of Elements per Chip

1

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

3.5 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.02mm

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Stock information temporarily unavailable.

€ 10.50

€ 0.42 Each (In a Pack of 25) (Exc. Vat)

€ 13.02

€ 0.521 Each (In a Pack of 25) (inc. VAT)

Vishay N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 SI2302DDS-T1-GE3
Select packaging type

€ 10.50

€ 0.42 Each (In a Pack of 25) (Exc. Vat)

€ 13.02

€ 0.521 Each (In a Pack of 25) (inc. VAT)

Vishay N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 SI2302DDS-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
25 - 225€ 0.42€ 10.50
250 - 600€ 0.42€ 10.50
625 - 1225€ 0.37€ 9.25
1250 - 2475€ 0.37€ 9.25
2500+€ 0.34€ 8.50

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.85V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

0.71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Number of Elements per Chip

1

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

3.5 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.02mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more