Vishay N-Channel MOSFET, 1.15 A, 100 V, 3-Pin SOT-23 SI2328DS-T1-E3

Κωδικός Προϊόντος της RS: 919-0278Κατασκευαστής: VishayΚωδικός Κατασκευαστή: SI2328DS-T1-E3
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.15 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

730 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

3.3 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.02mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 1.320,00

€ 0,44 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1.636,80

€ 0,546 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Vishay N-Channel MOSFET, 1.15 A, 100 V, 3-Pin SOT-23 SI2328DS-T1-E3

€ 1.320,00

€ 0,44 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1.636,80

€ 0,546 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Vishay N-Channel MOSFET, 1.15 A, 100 V, 3-Pin SOT-23 SI2328DS-T1-E3
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.15 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

730 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

3.3 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.02mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more