Vishay P-Channel MOSFET Transistor, 5.1 A, 12 V, 3-Pin SOT-23 SI2333CDS-T1-GE3
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
5.1 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Number of Elements per Chip
1
Length
3.04mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
15 nC @ 4.5 V, 9 nC @ 2.5 V
Height
1.02mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
10
P.O.A.
Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
10
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
5.1 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Number of Elements per Chip
1
Length
3.04mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
15 nC @ 4.5 V, 9 nC @ 2.5 V
Height
1.02mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products