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Vishay P-Channel MOSFET, 6 A, 20 V, 6-Pin TSOP-6 SI3433CDV-T1-GE3

RS Stock No.: 812-3142Brand: VishayManufacturers Part No.: SI3433CDV-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

20 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

3.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

30 nC @ 8 V

Maximum Operating Temperature

+150 °C

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.1mm

Height

1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

€ 10.00

€ 0.50 Each (In a Pack of 20) (Exc. Vat)

€ 12.40

€ 0.62 Each (In a Pack of 20) (inc. VAT)

Vishay P-Channel MOSFET, 6 A, 20 V, 6-Pin TSOP-6 SI3433CDV-T1-GE3
Select packaging type

€ 10.00

€ 0.50 Each (In a Pack of 20) (Exc. Vat)

€ 12.40

€ 0.62 Each (In a Pack of 20) (inc. VAT)

Vishay P-Channel MOSFET, 6 A, 20 V, 6-Pin TSOP-6 SI3433CDV-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
20 - 180€ 0.50€ 10.00
200 - 480€ 0.37€ 7.40
500 - 980€ 0.31€ 6.20
1000 - 1980€ 0.26€ 5.20
2000+€ 0.26€ 5.20

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

20 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

3.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

30 nC @ 8 V

Maximum Operating Temperature

+150 °C

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.1mm

Height

1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more