P-Channel MOSFET, 6.2 A, 12 V, 6-Pin TSOP Vishay SI3447CDV-T1-GE3
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
12 V
Package Type
TSOP
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
68 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
20 nC @ 8 V
Width
1.7mm
Number of Elements per Chip
1
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
Μονάδας (διαθέσιμο σε μία ταινία) (Exc. Vat)Χωρίς Φ.Π.Α
Standard
20
P.O.A.
Μονάδας (διαθέσιμο σε μία ταινία) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
20
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
12 V
Package Type
TSOP
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
68 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
20 nC @ 8 V
Width
1.7mm
Number of Elements per Chip
1
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products