Vishay ThunderFET N-Channel MOSFET, 11.1 A, 100 V, 8-Pin SOIC SI4056DY-T1-GE3

Κωδικός Προϊόντος της RS: 787-9137Κατασκευαστής: VishayΚωδικός Κατασκευαστή: SI4056DY-T1-GE3
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

11.1 A

Maximum Drain Source Voltage

100 V

Series

ThunderFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

31 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

5.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

19.6 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 5,50

€ 1,10 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 6,82

€ 1,364 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

Vishay ThunderFET N-Channel MOSFET, 11.1 A, 100 V, 8-Pin SOIC SI4056DY-T1-GE3
Επιλέγξτε συσκευασία

€ 5,50

€ 1,10 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 6,82

€ 1,364 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

Vishay ThunderFET N-Channel MOSFET, 11.1 A, 100 V, 8-Pin SOIC SI4056DY-T1-GE3

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

11.1 A

Maximum Drain Source Voltage

100 V

Series

ThunderFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

31 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

5.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

19.6 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more