Dual N/P-Channel MOSFET Transistor, 4.4 A, 5 A, 40 V, 8-Pin SOIC Vishay SI4567DY-T1-E3
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.4 A, 5 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
70 Ω, 122 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2.75 W, 2.95 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
12 nC @ 20 V, 8 nC @ 20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.5mm
Χώρα Προέλευσης
China
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P.O.A.
Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
Standard
10
P.O.A.
Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
10
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.4 A, 5 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
70 Ω, 122 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2.75 W, 2.95 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
12 nC @ 20 V, 8 nC @ 20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.5mm
Χώρα Προέλευσης
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products