Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.7 A, 6.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
42.5 mΩ, 62 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3 W, 3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
11.7 nC @ 10 V, 25 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.55mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 1,08
Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1,339
Μονάδας (Σε ένα πακέτο των 20) (Including VAT) Με Φ.Π.Α
20
€ 1,08
Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1,339
Μονάδας (Σε ένα πακέτο των 20) (Including VAT) Με Φ.Π.Α
20
Αγοράστε μαζικά
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 20 - 180 | € 1,08 | € 21,60 |
| 200 - 480 | € 0,86 | € 17,20 |
| 500 - 980 | € 0,73 | € 14,60 |
| 1000 - 1980 | € 0,68 | € 13,60 |
| 2000+ | € 0,58 | € 11,60 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.7 A, 6.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
42.5 mΩ, 62 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3 W, 3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
11.7 nC @ 10 V, 25 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.55mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products