Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
10.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.98mm
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.08mm
Typical Gate Charge @ Vgs
9.5 nC @ 10 V
Height
0.85mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
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20
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
10.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.98mm
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.08mm
Typical Gate Charge @ Vgs
9.5 nC @ 10 V
Height
0.85mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China