Vishay Dual SI7216DN Type N-Channel MOSFET, 6.5 A, 40 V Enhancement, 8-Pin PowerPack

Κωδικός Προϊόντος της RS: 180-7312Κατασκευαστής: VishayΚωδικός Κατασκευαστή: SI7216DN-T1-E3
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

40V

Series

SI7216DN

Package Type

PowerPack

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

25mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

20.8W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-50°C

Typical Gate Charge Qg @ Vgs

12.5nC

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Height

1.12mm

Width

3.4 mm

Standards/Approvals

No

Length

3.4mm

Automotive Standard

No

Χώρα Προέλευσης

China

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 3.750,00

€ 1,25 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 4.650,00

€ 1,55 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Vishay Dual SI7216DN Type N-Channel MOSFET, 6.5 A, 40 V Enhancement, 8-Pin PowerPack

€ 3.750,00

€ 1,25 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 4.650,00

€ 1,55 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Vishay Dual SI7216DN Type N-Channel MOSFET, 6.5 A, 40 V Enhancement, 8-Pin PowerPack

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

40V

Series

SI7216DN

Package Type

PowerPack

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

25mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

20.8W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-50°C

Typical Gate Charge Qg @ Vgs

12.5nC

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Height

1.12mm

Width

3.4 mm

Standards/Approvals

No

Length

3.4mm

Automotive Standard

No

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more