Vishay Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8 SI7288DP-T1-GE3

Κωδικός Προϊόντος της RS: 919-4334Κατασκευαστής: VishayΚωδικός Κατασκευαστή: SI7288DP-T1-GE3
brand-logo
Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

15.6 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

2

Length

5.99mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.07mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 3.300,00

€ 1,10 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 4.092,00

€ 1,364 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Vishay Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8 SI7288DP-T1-GE3

€ 3.300,00

€ 1,10 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 4.092,00

€ 1,364 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Vishay Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8 SI7288DP-T1-GE3
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

15.6 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

2

Length

5.99mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.07mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more