N-Channel MOSFET, 100 A, 40 V, 8-Pin PowerPAK SO-8DC Vishay SIDR638DP-T1-RE3
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET® Gen IV
Package Type
PowerPAK SO-8DC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.00088 Ω, 0.00116 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Number of Elements per Chip
1
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 3,02
Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 3,745
Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α
3000
€ 3,02
Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 3,745
Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET® Gen IV
Package Type
PowerPAK SO-8DC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.00088 Ω, 0.00116 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products