Vishay E N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK SIHB11N80AE-GE3
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
800 V
Package Type
D2PAK (TO-263)
Series
E
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.391 Ω
Maximum Gate Threshold Voltage
2 → 4V
Number of Elements per Chip
1
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€ 78,50
€ 1,57 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 97,34
€ 1,947 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
50
€ 78,50
€ 1,57 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 97,34
€ 1,947 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
50
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
800 V
Package Type
D2PAK (TO-263)
Series
E
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.391 Ω
Maximum Gate Threshold Voltage
2 → 4V
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products