Vishay D Series N-Channel MOSFET, 25 A, 400 V, 3-Pin TO-247AC SIHG25N40D-GE3

Κωδικός Προϊόντος της RS: 145-1829Κατασκευαστής: VishayΚωδικός Κατασκευαστή: SIHG25N40D-GE3
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

400 V

Series

D Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

278 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

5.31mm

Length

15.87mm

Typical Gate Charge @ Vgs

44.4 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

20.82mm

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 91,25

€ 3,65 Μονάδας (Σε μία ράγα των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 113,15

€ 4,526 Μονάδας (Σε μία ράγα των 25) Με Φ.Π.Α

Vishay D Series N-Channel MOSFET, 25 A, 400 V, 3-Pin TO-247AC SIHG25N40D-GE3

€ 91,25

€ 3,65 Μονάδας (Σε μία ράγα των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 113,15

€ 4,526 Μονάδας (Σε μία ράγα των 25) Με Φ.Π.Α

Vishay D Series N-Channel MOSFET, 25 A, 400 V, 3-Pin TO-247AC SIHG25N40D-GE3

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Ράγα
25 - 25€ 3,65€ 91,25
50 - 100€ 3,50€ 87,50
125+€ 3,21€ 80,25

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JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

400 V

Series

D Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

278 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

5.31mm

Length

15.87mm

Typical Gate Charge @ Vgs

44.4 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

20.82mm

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more