N-Channel MOSFET, 70 A, 600 V, 3-Pin TO-247AC Vishay SiHG70N60EF-GE3
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
600 V
Series
EF Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
520 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.31mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
253 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
20.82mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 16,13
Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 20,00
Μονάδας Με Φ.Π.Α
Standard
1
€ 16,13
Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 20,00
Μονάδας Με Φ.Π.Α
Standard
1
Αγοράστε μαζικά
| Quantity Ποσότητα | Τιμή μονάδας |
|---|---|
| 1 - 9 | € 16,13 |
| 10 - 24 | € 15,55 |
| 25 - 49 | € 14,95 |
| 50 - 99 | € 13,51 |
| 100+ | € 13,01 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
600 V
Series
EF Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
520 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.31mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
253 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
20.82mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products