Vishay D Series N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB SIHP8N50D-GE3
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.65mm
Length
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.01mm
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 68,00
€ 1,36 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 84,32
€ 1,686 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
50
€ 68,00
€ 1,36 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 84,32
€ 1,686 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
50
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
| Quantity Ποσότητα | Τιμή μονάδας | Per Ράγα |
|---|---|---|
| 50 - 50 | € 1,36 | € 68,00 |
| 100 - 200 | € 1,17 | € 58,50 |
| 250+ | € 1,04 | € 52,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.65mm
Length
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.01mm
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products