Vishay TrenchFET Dual P-Channel MOSFET, 71.9 A, 80 V, 8-Pin PowerPAK SO-8 SiR681DP-T1-RE3

Κωδικός Προϊόντος της RS: 228-2909Κατασκευαστής: VishayΚωδικός Κατασκευαστή: SiR681DP-T1-RE3
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

71.9 A

Maximum Drain Source Voltage

80 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0112 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Number of Elements per Chip

2

Transistor Material

Si

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 5.790,00

€ 1,93 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 7.179,60

€ 2,393 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Vishay TrenchFET Dual P-Channel MOSFET, 71.9 A, 80 V, 8-Pin PowerPAK SO-8 SiR681DP-T1-RE3

€ 5.790,00

€ 1,93 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 7.179,60

€ 2,393 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Vishay TrenchFET Dual P-Channel MOSFET, 71.9 A, 80 V, 8-Pin PowerPAK SO-8 SiR681DP-T1-RE3
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

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Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

71.9 A

Maximum Drain Source Voltage

80 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0112 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Number of Elements per Chip

2

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more