Vishay P-Channel MOSFET, 195 A, 30 V, 8-Pin PowerPAK SO-8 SIRA99DP-T1-GE3
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +16 V
Number of Elements per Chip
1
Width
5mm
Length
5.99mm
Typical Gate Charge @ Vgs
172.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
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€ 18,00
€ 3,60 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
€ 22,32
€ 4,464 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α
Συσκευασία Παραγωγής (Καρούλι)
5
€ 18,00
€ 3,60 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
€ 22,32
€ 4,464 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α
Συσκευασία Παραγωγής (Καρούλι)
5
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +16 V
Number of Elements per Chip
1
Width
5mm
Length
5.99mm
Typical Gate Charge @ Vgs
172.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products