P-Channel MOSFET, 3 A, 12 V, 3-Pin SOT-23 Vishay SQ2315ES-T1_GE3
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
92 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
3.04mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Series
SQ Rugged
Minimum Operating Temperature
-55 °C
Height
1.02mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 0,71
Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α
€ 0,88
Μονάδας (Σε ένα πακέτο των 20) (Including VAT) Με Φ.Π.Α
20
€ 0,71
Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α
€ 0,88
Μονάδας (Σε ένα πακέτο των 20) (Including VAT) Με Φ.Π.Α
20
Αγοράστε μαζικά
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 20 - 180 | € 0,71 | € 14,20 |
| 200 - 480 | € 0,58 | € 11,60 |
| 500 - 980 | € 0,48 | € 9,60 |
| 1000 - 1980 | € 0,38 | € 7,60 |
| 2000+ | € 0,30 | € 6,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
92 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
3.04mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Series
SQ Rugged
Minimum Operating Temperature
-55 °C
Height
1.02mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products