Vishay Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual SQJ208EP-T1_GE3

Κωδικός Προϊόντος της RS: 188-5101Κατασκευαστής: VishayΚωδικός Κατασκευαστή: SQJ208EP-T1_GE3
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A, 60 A

Maximum Drain Source Voltage

40 (Channel 1) V, 40 (Channel 2) V

Package Type

PowerPAK SO-8L Dual

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3 (Channel 1) V, 2.4 (Channel 2) V

Minimum Gate Threshold Voltage

1.3 (Channel 1) V, 1.4 (Channel 2) V

Maximum Power Dissipation

27 W, 48 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

4.47mm

Length

5mm

Typical Gate Charge @ Vgs

22 nC @ 10 V (Channel 1), 48.2 nC @ 10 V (Channel 2)

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

1.01mm

Automotive Standard

AEC-Q101

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€ 16,70

€ 1,67 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 20,71

€ 2,071 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α

Vishay Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual SQJ208EP-T1_GE3
Επιλέγξτε συσκευασία

€ 16,70

€ 1,67 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 20,71

€ 2,071 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α

Vishay Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual SQJ208EP-T1_GE3

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
10 - 90€ 1,67€ 16,70
100 - 240€ 1,62€ 16,20
250 - 490€ 1,38€ 13,80
500 - 990€ 1,15€ 11,50
1000+€ 0,97€ 9,70

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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A, 60 A

Maximum Drain Source Voltage

40 (Channel 1) V, 40 (Channel 2) V

Package Type

PowerPAK SO-8L Dual

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3 (Channel 1) V, 2.4 (Channel 2) V

Minimum Gate Threshold Voltage

1.3 (Channel 1) V, 1.4 (Channel 2) V

Maximum Power Dissipation

27 W, 48 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

4.47mm

Length

5mm

Typical Gate Charge @ Vgs

22 nC @ 10 V (Channel 1), 48.2 nC @ 10 V (Channel 2)

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

1.01mm

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more