N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220AB Vishay SUP50020E-GE3
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
126 nC @ 10 V
Length
10.51mm
Height
15.49mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 4,08
Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
€ 5,059
Μονάδας (Σε ένα πακέτο των 2) (Including VAT) Με Φ.Π.Α
2
€ 4,08
Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
€ 5,059
Μονάδας (Σε ένα πακέτο των 2) (Including VAT) Με Φ.Π.Α
2
Αγοράστε μαζικά
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 2 - 18 | € 4,08 | € 8,16 |
| 20 - 98 | € 3,88 | € 7,76 |
| 100 - 198 | € 3,58 | € 7,16 |
| 200 - 498 | € 3,40 | € 6,80 |
| 500+ | € 3,25 | € 6,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
126 nC @ 10 V
Length
10.51mm
Height
15.49mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products