Vishay N-Channel MOSFET, 150 A, 80 V, 3-Pin TO-220AB SUP60020E-GE3

RS Stock No.: 188-5143PBrand: VishayManufacturers Part No.: SUP60020E-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

80 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.65mm

Length

10.51mm

Typical Gate Charge @ Vgs

151.2 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

9.01mm

Country of Origin

China

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Stock information temporarily unavailable.

€ 237.50

€ 4.75 Each (Supplied in a Tube) (Exc. Vat)

€ 294.50

€ 5.89 Each (Supplied in a Tube) (inc. VAT)

Vishay N-Channel MOSFET, 150 A, 80 V, 3-Pin TO-220AB SUP60020E-GE3
Select packaging type

€ 237.50

€ 4.75 Each (Supplied in a Tube) (Exc. Vat)

€ 294.50

€ 5.89 Each (Supplied in a Tube) (inc. VAT)

Vishay N-Channel MOSFET, 150 A, 80 V, 3-Pin TO-220AB SUP60020E-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
50 - 120€ 4.75€ 23.75
125 - 245€ 4.57€ 22.85
250 - 495€ 4.36€ 21.80
500+€ 4.15€ 20.75

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

80 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.65mm

Length

10.51mm

Typical Gate Charge @ Vgs

151.2 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

9.01mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more