Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
15A
Peak Reverse Repetitive Voltage
600V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
2V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
60ns
Peak Non-Repetitive Forward Surge Current
150A
Λεπτομέρειες Προϊόντος
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 6,45
Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 8,00
Μονάδας (Including VAT) Με Φ.Π.Α
1
€ 6,45
Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 8,00
Μονάδας (Including VAT) Με Φ.Π.Α
1
Αγοράστε μαζικά
Quantity Ποσότητα | Τιμή μονάδας |
---|---|
1 - 9 | € 6,45 |
10 - 49 | € 5,90 |
50 - 99 | € 5,39 |
100 - 249 | € 5,07 |
250+ | € 4,71 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
15A
Peak Reverse Repetitive Voltage
600V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
2V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
60ns
Peak Non-Repetitive Forward Surge Current
150A
Λεπτομέρειες Προϊόντος
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.