Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayMounting Type
Panel Mount
Package Type
TO-244
Maximum Continuous Forward Current
244A
Peak Reverse Repetitive Voltage
400V
Diode Configuration
Common Cathode
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
3
Maximum Forward Voltage Drop
1.5V
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
120ns
Peak Non-Repetitive Forward Surge Current
900A
Λεπτομέρειες Προϊόντος
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
€ 652,30
€ 65,23 Μονάδας (Σε ένα Κουτί των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 808,85
€ 80,885 Μονάδας (Σε ένα Κουτί των 10) Με Φ.Π.Α
10
€ 652,30
€ 65,23 Μονάδας (Σε ένα Κουτί των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 808,85
€ 80,885 Μονάδας (Σε ένα Κουτί των 10) Με Φ.Π.Α
10
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
Quantity Ποσότητα | Τιμή μονάδας | Per Κουτί |
---|---|---|
10 - 10 | € 65,23 | € 652,30 |
20+ | € 62,91 | € 629,10 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayMounting Type
Panel Mount
Package Type
TO-244
Maximum Continuous Forward Current
244A
Peak Reverse Repetitive Voltage
400V
Diode Configuration
Common Cathode
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
3
Maximum Forward Voltage Drop
1.5V
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
120ns
Peak Non-Repetitive Forward Surge Current
900A
Λεπτομέρειες Προϊόντος
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.