Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
463 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
161 nC @ 20 V
Width
21.1mm
Transistor Material
SiC
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.3V
Height
5.21mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 133,36
Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 165,37
Μονάδας (Including VAT) Με Φ.Π.Α
1
€ 133,36
Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 165,37
Μονάδας (Including VAT) Με Φ.Π.Α
1
Αγοράστε μαζικά
Quantity Ποσότητα | Τιμή μονάδας |
---|---|
1 - 1 | € 133,36 |
2 - 4 | € 132,71 |
5+ | € 130,59 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
463 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
161 nC @ 20 V
Width
21.1mm
Transistor Material
SiC
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.3V
Height
5.21mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.