Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +20 V
Width
5.21mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
16.13mm
Typical Gate Charge @ Vgs
115 nC @ 20 V, 115 nC @ 5 V
Height
21.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.3V
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
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Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 59,44
Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 73,706
Μονάδας (Σε μία ράγα των 30) (Including VAT) Με Φ.Π.Α
30
€ 59,44
Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 73,706
Μονάδας (Σε μία ράγα των 30) (Including VAT) Με Φ.Π.Α
30
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +20 V
Width
5.21mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
16.13mm
Typical Gate Charge @ Vgs
115 nC @ 20 V, 115 nC @ 5 V
Height
21.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.3V
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.