Wolfspeed SiC N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-247 C2M0080120D
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
208 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
208 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +25 V
Width
5.21mm
Transistor Material
SiC
Number of Elements per Chip
1
Length
16.13mm
Typical Gate Charge @ Vgs
49.2 nC @ 20 V
Maximum Operating Temperature
+150 °C
Height
21.1mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 1.290,60
€ 43,02 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1.600,34
€ 53,345 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
30
€ 1.290,60
€ 43,02 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1.600,34
€ 53,345 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
30
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
208 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
208 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +25 V
Width
5.21mm
Transistor Material
SiC
Number of Elements per Chip
1
Length
16.13mm
Typical Gate Charge @ Vgs
49.2 nC @ 20 V
Maximum Operating Temperature
+150 °C
Height
21.1mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products