Wolfspeed SiC N-Channel MOSFET, 5 A, 1700 V, 3-Pin TO-247 C2M1000170D

Κωδικός Προϊόντος της RS: 904-7345PΚατασκευαστής: WolfspeedΚωδικός Κατασκευαστή: C2M1000170D
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

1700 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-5 V, +20 V

Width

5.21mm

Transistor Material

SiC

Number of Elements per Chip

1

Length

16.13mm

Typical Gate Charge @ Vgs

13 nC @ 20 V, 13 nC @ 5 V

Maximum Operating Temperature

+150 °C

Height

21.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

3.8V

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

MOSFET Transistors, Wolfspeed

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€ 73,85

€ 14,77 Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α

€ 91,57

€ 18,31 Μονάδας (διαθέσιμο σε μία ράγα) Με Φ.Π.Α

Wolfspeed SiC N-Channel MOSFET, 5 A, 1700 V, 3-Pin TO-247 C2M1000170D
Επιλέγξτε συσκευασία

€ 73,85

€ 14,77 Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α

€ 91,57

€ 18,31 Μονάδας (διαθέσιμο σε μία ράγα) Με Φ.Π.Α

Wolfspeed SiC N-Channel MOSFET, 5 A, 1700 V, 3-Pin TO-247 C2M1000170D

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδας
5 - 9€ 14,77
10 - 29€ 14,72
30 - 89€ 14,51
90+€ 14,30

Ideate. Create. Collaborate

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No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

1700 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-5 V, +20 V

Width

5.21mm

Transistor Material

SiC

Number of Elements per Chip

1

Length

16.13mm

Typical Gate Charge @ Vgs

13 nC @ 20 V, 13 nC @ 5 V

Maximum Operating Temperature

+150 °C

Height

21.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

3.8V

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

MOSFET Transistors, Wolfspeed

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more