SiC N-Channel MOSFET, 115 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0016120K

Κωδικός Προϊόντος της RS: 192-3367Κατασκευαστής: WolfspeedΚωδικός Κατασκευαστή: C3M0016120K
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

115 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

556 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Transistor Material

SiC

Length

16.13mm

Typical Gate Charge @ Vgs

211 nC @ 4/15V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Height

23.6mm

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 104,03

Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 128,997

Μονάδας (Σε μία ράγα των 30) (Including VAT) Με Φ.Π.Α

SiC N-Channel MOSFET, 115 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0016120K

€ 104,03

Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 128,997

Μονάδας (Σε μία ράγα των 30) (Including VAT) Με Φ.Π.Α

SiC N-Channel MOSFET, 115 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0016120K
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

115 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

556 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Transistor Material

SiC

Length

16.13mm

Typical Gate Charge @ Vgs

211 nC @ 4/15V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Height

23.6mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more