SiC N-Channel MOSFET, 35 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0065090J

Κωδικός Προϊόντος της RS: 915-8830Κατασκευαστής: WolfspeedΚωδικός Κατασκευαστή: C3M0065090J
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

900 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

78 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+25 V

Length

10.23mm

Typical Gate Charge @ Vgs

30 nC @ 15 V

Width

10.99mm

Transistor Material

SiC

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.4V

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

MOSFET Transistors, Wolfspeed

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 19,81

Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 24,56

Μονάδας (Including VAT) Με Φ.Π.Α

SiC N-Channel MOSFET, 35 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0065090J
Επιλέγξτε συσκευασία

€ 19,81

Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 24,56

Μονάδας (Including VAT) Με Φ.Π.Α

SiC N-Channel MOSFET, 35 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0065090J
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδας
1 - 9€ 19,81
10 - 24€ 18,07
25 - 49€ 17,85
50 - 99€ 17,64
100+€ 17,37

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

900 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

78 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+25 V

Length

10.23mm

Typical Gate Charge @ Vgs

30 nC @ 15 V

Width

10.99mm

Transistor Material

SiC

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.4V

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

MOSFET Transistors, Wolfspeed

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more