SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 Wolfspeed C3M0065100K
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
1000 V
Series
C3M
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
113.5 W
Maximum Gate Source Voltage
-8 V, +19 V
Width
5.21mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
16.13mm
Typical Gate Charge @ Vgs
35 nC @ 15 V, 35 nC @ 4 V
Height
23.6mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Silicon Carbide Power MOSFET, C3M Series, Cree Inc.
MOSFET Transistors, Cree Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 23,14
Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 28,694
Μονάδας (Σε μία ράγα των 30) (Including VAT) Με Φ.Π.Α
30
€ 23,14
Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 28,694
Μονάδας (Σε μία ράγα των 30) (Including VAT) Με Φ.Π.Α
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
1000 V
Series
C3M
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
113.5 W
Maximum Gate Source Voltage
-8 V, +19 V
Width
5.21mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
16.13mm
Typical Gate Charge @ Vgs
35 nC @ 15 V, 35 nC @ 4 V
Height
23.6mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Silicon Carbide Power MOSFET, C3M Series, Cree Inc.
MOSFET Transistors, Cree Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products